Events Calendar
The Evolution of Photonic Integration Based Products and Related Technologies
Friday April 1, 2016
| 11:00 am
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Presenter: |
Dr. Chee Hing Tan, Director of Research &Innovations and leads the Advanced
Detector Centre at The University of Sheffield, UK |
|---|---|---|
| Series: | OSE Seminars | |
| Abstract: | Commercial infrared APDs are currently based on InGaAs absorption region and InP multiplication region. They are widely used for high speed optical networks, for LIDAR and photon counting applications. It is well known that current InP APDs have reached their performance limits, in terms of gain-bandwidth product (GBP) of less than 200 GHz, high excess noise associated with the multiplication process and strong temperature dependence of breakdown voltage.In this talk, I will present research at Sheffield to develop APDs with negligible excess noise, very high gain at low applied bias and extremely high GBP. I will first present our effort to transform InAs, a material that was generally thought of as leaky diode, to APDs with high gain, low noise (excess noise factor below 2) and high GBP of 580 GHz. These were achieved by designing the InAs APDs such that only electrons will initiate impact onization events. In parallel to InAs, I will also present some recent progress made using very thin layer AlGaAsSb, a highly promising material for direct replacement of InP to achieve significantly lower noise and higher GBP. The avalanche gain has much weaker dependence on temperature, the excess noise factor is comparable to Si APDs and much higher GBP than InP can be achieved | |
| Location: | Room 103, Center for High Tech Materials | |
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