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Toward atomic-precision devices from multiscale fabrication including scanning tunneling microscopy (STM)

Thursday December 11, 2014
3:30 pm


 Presenter:  Stephen Carr, SNL
 Series:  CQuIC Seminars
 Abstract:  Semiconductor quantum dot devices, donor-based devices, and hybrid donor-dot devices have been and continue to be investigated for fundamental physics and as potential quantum bits (qubits) for quantum manipulation and information processing, where the qubit states are typically associated with the charge and/or spin of confined electrons. Such devices are often fabricated using top-down techniques similar to those originally developed for the semiconductor industry. An alternative approach to device fabrication, pioneered by M.Y. Simmons et al at the CQC2T in Australia, is to combine top-down and bottom-up techniques including the use of the Scanning Tunneling Microscope (STM) as a versatile lithography tool. In this talk I will describe our results from a multiscale fabrication process that
includes two novel aspects, mesoscale patterning by field-emission STM and registration using Scanning Capacitance Microscopy (SCM), we have implemented at Sandia National Laboratories. Experimental data including cryogenic electrical measurements of devices indicate that the multiscale fabrication process has been successfully demonstrated.


Stephen M. Carr
Sandia National Laboratories Albuquerque, New Mexico


Sandia National Laboratories is a multi-program laboratory operated by Sandia
Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-C04-94AL85000.
 Host:  Ivan Deutsch
 Location:  PAIS-2540, PAIS

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