Ge/SiGe quantum electronic devices
Presented by Tzu-Ming Lu, Sandia National Labs
One of the building blocks of today's digital technology is two-dimensional electrons in metal-oxide-semiconductor field-effect transistors. These low-dimensional electrons/holes may play an equally essential role in future computing paradigms. Ge/SiGe heterostructures hosting low-dimensional holes have recently emerged as an important material platform for future quantum electronics and spintronics. In this talk, I will first review the fabrication and device operation of high-mobility Ge/SiGe heterostructure field-effect transistors and then present the characterization of the quantum properties of these two-dimensional hole systems. Paths toward quantum computing, including topological and spin-based approaches based on this material system, will be discussed
3:30 pm, Thursday, February 28, 2019
Room 190, Physics & Astronomy
Northeast corner of Lomas and Yale, Albuquerque, New Mexico
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