Special Talk
Toward Efficient Entanglement Generation with Defects in Solid-state
Presented by Kai-Mei Fu, University of Washington
In recent years there has been significant interest in utilizing solid-state defects as atomic-like systems for quantum information applications. In this talk I will first discuss the potential of combining solid-state defects and integrated photonics to realize quantum information processors, highlighting on my own group's research on the nitrogen-vacancy defect in diamond, a highly localized molecular-like defect. In the second half, I will focus on defects that form effective-mass potentials for semiconductor carriers, which may be promising alternatives to diamond-based platforms. For these defects, the optical and spin properties are derived from a combination of the bulk semiconductor and effective mass potential properties, and can often be derived without the need of ab initio numerical calculations. I will present measurements on the longitudinal spin relaxation time (T1) of electrons bound to the potential provided by shallow donors in GaAs, InP, CdTe, and ZnO. In ZnO, in which T1 exceeds 100 ms, preliminary coherence time measurements will be reported.
3:30 pm, Thursday, September 21, 2017
PAIS-2540, PAIS
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