OSE Seminars
A Study of Dislocation Networks in GaSb on GaAs Using Transmission Electron Microscopy
Presented by Darryl Shima, Ph.D. Candidate from Nanoscience and Microsystems and Engineering, UNM
The growth of GaSb on GaAs is of interest for a variety of scientific and technological applications. Some evidence suggests that low threading dislocation density GaSb can be grown directly on GaAs through arrays of periodic edge misfit dislocations. However, significant conflicting data also exist. This work seeks to clarify the question through transmission electron microscopy analysis of GaSb grown on GaAs. The results of this work show that the single strategy of direct growth of GaSb on GaAs results in dislocation densities too high for devices. A secondary strategy of dislocation filtering layers is introduced to further reduce threading dislocations. Dislocation filtering layers are shown to be effective at bending threading dislocations at strained interfaces. Advanced analytical methods are employed to assist in developing a unique view of the dislocation filtering layer. These results enable a comprehensive evaluation of dislocation behavior extending the scientific understanding of this complex interface.
11:00 am, Thursday, April 13, 2017
Room 103, Center for High Tech Materials
Science and Technology Park - South Campus
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A schedule of talks within the Department of Physics and Astronomy is available on the P&A web site at http://physics.unm.edu/pandaweb/events/index.php