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Center for Astrophysics Research and Technologies Seminar Series Information


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Nonpolar and Semipolar III-Nitride Optoelectronics

Thursday October 19, 2017
2:00 pm

 Presenter:  Dr. Daniel Feezell, UNM ECE Dept and CHTM
 Series:  OSE Seminars
 Abstract:  III-nitrides, including alloys of AlN, GaN, and InN, have revolutionized light-emitting diodes (LEDs) for solid-state lighting, diode lasers for projection and high-density optical data storage, and electronics for power switching. Despite significant advances, III-nitride materials and devices remain relatively immature compared to conventional III-V semiconductors and numerous opportunities still exist for research on complex materials challenges and novel device concepts. Conventional III-nitride optoelectronics are grown on the polar c-plane of the wurtzite crystal and their performance is adversely affected by the presence of internal polarization-related electric fields. Alternatively, growth of III-nitride structures on nonpolar and semipolar orientations presents a viable approach to reducing or eliminating the issues associated with polarization-related electric fields. These orientations also offer increased design flexibility and provide a multitude of unique physical properties. In this talk, I will highlight the unique properties and advantages of nonpolar and semipolar III-nitrides and present two techniques for the epitaxial growth of these materials. The first focuses on conventional planar growth on freestanding GaN substrates, while the second utilizes bottom-up selective-area epitaxy to realize nanostructure-based devices. I will then discuss the application of these platforms to important optoelectronic devices suited for lighting, displays, communications, and sensing.
 Location:  Room 103, Center for High Tech Materials

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