Program

SESSION 8: Ions (Pavilion I - III)

Chair: Hartmut Häffner (UC Berkeley)
1:30 pm - 2:15 pmPeter Maunz, (Sandia)
High-fidelity two-qubit quantum gates in a scalable surface ion trap

Abstract. Microfabricated ion traps are currently the most promising technology for scaling trapped ion quantum information processing systems to the size necessary to solve real-world problems. However, microfabricated surface traps usually have higher heating rates and a shallower trap depth than macroscopic three dimensional traps. In Sandia’s state of the art High Optical Access (HOA) trap, we have achieved heating rates at room temperature as low as 30 quanta/second (Ytterbium, 85µm from closest electrode) and have run measurements with a single ion for longer than 100 hours. Here, we present the realization of high-fidelity one- and two-qubit gates at room temperature in the HOA surface trap. We report on the first demonstration of single qubit gates above some fault-tolerance thresholds, as proven by analyzing the implemented quantum operations using Gate Set Tomography (GST) which yields a diamond distance to the target gate below 8(1) x 10^-5. Furthermore, we realize a Mølmer-Sørensen two-qubit gate and analyze the quantum operations in the symmetric subspace of the two-qubit Hilbert space using qutrit GST. For the two-qubit gate we achieve a process infidelity below 0.5%, the highest two-qubit fidelity reported to date in any scalable trap. These results demonstrate the viability of a scalable, state of the art system for quantum information processing using modern microfabricated surface ion traps.

2:15 pm - 2:45 pmTing Rei Tan, Wineland group (NIST, Boulder)
Recent progress on trapped-ion quantum information processing at NIST

Abstract. Recent experiments on quantum information processing using hyperfine/Zeeman states of trapped 9Be+ and 25Mg+ ions are described. With an improved laser setup including better laser beam quality provided by robust UV optical fibers, two-qubit gate fidelity F  0.999 is achieved. We also realize two-qubit “hybrid” Mølmer-Sørensen, CNOT, and SWAP gates between a 9Be+ - 25Mg+ ion pair. We demonstrate two qubit entanglement (F > 0.99) with an implementation of “quantum Zeno dynamics” subspace engineering technique, which relaxes certain technical requirements. We also summarize progress on (1) spin-squeezing of ~ 100 ions in a Penning trap, (2) all-microwave quantum gates in a surface-electrode trap, (3) cryogenic trap operations, and (4) studies of “anomalous” heating. *Supported by IARPA, ONR, and the NIST Quantum Information Program

2:45 pm - 3:15 pmErik Urban, Häffner group, (UC Berkeley)
Towards a new class of trapped ion experiments with ion rings

Abstract. We present the design and implementation of a novel surface ion trap allowing for trapping of ions in a ring configuration. A ring topology introduces a number of new features that are not present in conventional, linear ion traps, such as extremely low trap frequencies, periodic boundary conditions, and the ability to rotate. These new features open the possibility to conduct a new class of experiments previously inaccessible to ion traps. Towards this goal, we trap up to 25 ions 400 μm above the plane of a trap surface in a ring geometry with a diameter of 90 μm. The large trapping height relative to the ion-ion spacing gives us the the ability to control electric fields at the trapping point with only a few compensation electrodes. This control allows us to pin the ions either into a localized crystal on one side of the ring or to fully delocalize them over the full extent of the ring, demonstrating any symmetry breaking in our ring is on energy scales below the Doppler limit of 0.5 mK. We present studies of the trap frequencies in a pinned configuration and its transition to a depinned, rotating state.

SQuInT Chief Organizer
Prof. Akimasa Miyake
amiyake@unm.edu

SQuInT Co-Organizer
Prof. Elohim Becerra
fbecerra@unm.edu

SQuInT Founder
Prof. Ivan Deutsch
ideutsch@unm.edu

SQuInT Administrator
Gloria Cordova
gjcordo1@unm.edu
505 277-1850

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