Abstracts

Effects of addressing laser beam intensity profiles on single qubit gates in neutral atom quantum computing

Presenting Author: Katharina Gillen-Christandl, California Polytechnic State University, San Luis Obispo
Contributing Author(s): Glen D. Gillen (California Polytechnic State University, San Luis Obispo), Michal J. Piotrowicz (University of Wisconsin, Madison), Mark Saffman (University of Wisconsin, Madison)

In neutral atom quantum computing experiments, laser beams are used to perform single and two-qubit gates on atoms trapped by light patterns. Experimental limitations such as atomic motion in the light trap and laser beam misalignment affect the gate fidelity that can be achieved. The intensity profile of the addressing laser beams used influences how sensitive the atomic qubit gates are to these limitations. Super Gaussian beam profiles have a more uniform transverse intensity profile than Gaussian beams and are thus more robust against beam misalignment and atomic motion in the trap. We have calculated the density-weighted intensity variance and the Rabi oscillations resulting from a pair of Raman laser beams with various super Gaussian orders for atoms trapped in a two-dimensional trap array formed by Gaussian laser beams. We repeated the calculations for several different trapped atom temperatures, as well as radial and axial beam misalignments. We found that for super Gaussian beams of order n=6 the decay time of the resulting Rabi oscillations can be increased by a factor of 60 compared to a Gaussian laser beam (n=2) while reducing crosstalk to neighboring trap sites. We have thus identified a way to improve the gate fidelity of neutral atom qubit gates by changing the addressing laser beam intensity profile used. MS and MJP were supported by the IARPA MQCO program through ARO contract W911NF-10-1-0347.

Read this article online: http://arxiv.org/abs/1510.07708

(Session 5 : Thursday from 5:00 - 7:00 pm)

 

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