Abstracts

Fully reconfigurable gate architecture for Si/SiGe spin qubits

Jason Petta, Princeton University

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Depletion mode architectures for gate-defined quantum dots have been successful in the implementation of single, double and triple quantum dots. However, scaling up to more complicated devices presents serious lithographic challenges. I will present a reconfigurable, accumulation mode lateral quantum dot device architecture. The same device can be operated as a few electron single quantum dot or a few electron double quantum dot. High sensitivity single electron charge sensing is achieved using a nearby quantum dot as a charge detector. I will also describe recent efforts to couple semiconductor quantum dots to microwave cavities.